专利名称：Semiconductor integrated circuit device with
capacitor formed under bonding pad
发明人：Sang-Heon Lee申请号：US09352218申请日：19990713公开号：US0759B2公开日：20021105
专利附图：
摘要：A semiconductor device is provided which includes a semiconductor substratehaving a main surface. A bonding pad is formed on the main surface. A multi-layer wiringstructure is disposed between the main surface and the bonding pad. The multi-layer
wiring structure includes a first wiring layer, a second wiring layer, and an interlayerinsulating film therebetween. The first layer, the second layer, and the interlayer filmform a capacitor disposed under the bonding pad.
申请人：SAMSUNG ELECTRONICS CO., LTD.
代理机构：F.Chau & Associates, LLP
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